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Wir sind führender Hersteller und Lieferant von Forschungsmaterialien
| Structure formula: | Al2O3 | |
|---|---|---|
| State: | monocrystalline | |
| Crystal structure: | hexagonal | a = 4.77 Å c = 13.04 Å |
| Density: | 3.98 g/cm3 | |
| Melting point: | 2040°C | |
| Coefficient of expansion: | 6.7 * 10-6/°C 5.0 * 10-6/°C |
parallel C-axis perpendicular C-axis |
| Dielectrical constant (e ): | 9.0 11.5 |
parallel C-axis perpendicular C-axis |
| Dielectrical lost (10GHz): | 3 * 10-5 8.6 * 10-5 |
parallel C-axis perpendicular C-axis |
| Specific resistance: | 1019 W/cm |
| Production method: | Czochralski, HEM, Verneuil grown |
|---|---|
| Orientation: | (0001), (1-102), (11-20) |
| Orientation accuracy: | until £ 0.5° |
| Standard size: | 10mm x 10mm x thickness 1mm or 0.5mm |
| Tolerance of length: |
± 0.02mm |
| Tolerance of thickness: |
± 0.02mm |
| Parallelness: |
£ 0.3° |
| Polishing: | one side or both sides epi-polished |
| Flatness: |
£ 0.3µm / 10mm |
| Roughness of surface: | Ra £ 10Å |
| Scratches: | none |
| Surface quality: | with light microscope without defects |