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Structure formula: | Al2O3 | |
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State: | monocrystalline | |
Crystal structure: | hexagonal | a = 4.77 Å c = 13.04 Å |
Density: | 3.98 g/cm3 | |
Melting point: | 2040°C | |
Coefficient of expansion: | 6.7 * 10-6/°C 5.0 * 10-6/°C |
parallel C-axis perpendicular C-axis |
Dielectrical constant (e ): | 9.0 11.5 |
parallel C-axis perpendicular C-axis |
Dielectrical lost (10GHz): | 3 * 10-5 8.6 * 10-5 |
parallel C-axis perpendicular C-axis |
Specific resistance: | 1019 W/cm |
Production method: | Czochralski, HEM, Verneuil grown |
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Orientation: | (0001), (1-102), (11-20) |
Orientation accuracy: | until £ 0.5° |
Standard size: | 10mm x 10mm x thickness 1mm or 0.5mm |
Tolerance of length: |
± 0.02mm |
Tolerance of thickness: |
± 0.02mm |
Parallelness: |
£ 0.3° |
Polishing: | one side or both sides epi-polished |
Flatness: |
£ 0.3µm / 10mm |
Roughness of surface: | Ra £ 10Å |
Scratches: | none |
Surface quality: | with light microscope without defects |