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Substrate Einkristalle



I. Substrate single crystals for superconductivity

Crystal tructure M.P. [°C] Dielectric constant Growth Technique Info
Al2O3
Sapphire
Hexag.
a=4.77Å
c=13.04Å
2040 9.0/11.5
parallel/perpendicular
C-axis
CZ
LaAlO3 Rhombo
a=3.790Å
c=13.11Å
2100 24.5 CZ
ø2"
Th:
LaAlO3
Cubic
a=7.57Å
2080 24.0 CZ
ø30mm
MgO Cubic 2800 10 ?
NdCaAlO4 Tetrag.
a=3.685Å
c=12.12Å
1850 19.5 CZ
ø30mm
 
NdGaO3 Orthor.
a=5.43Å
b=5.50Å
c=7.71Å
1600 25 CZ
ø2"
SrLaAlO4 Tetrag.
a=3.756Å
c=12.63Å
1650 16.8 CZ
ø20mm
 
SrTiO3 Cubic
a=3.90Å
2080 300 Verneuil
ø20mm
YAlO3 Orthog.
a=5.176Å
b=5.307Å
c=7.355Å
1870 16`20 CZ
ø30mm
 
YSZ Cubic
a=5.41Å
~2500 27 Flux
 

II. Substrate bicrystals for superconductivity

Material SrTiO3 MgO  Al2O3 YSZ  Nb:SrTiO3
Dimensions (mm) 10 x 10 x 0.5 10 x 10 x 0.5 10 x 10 x 0.5 10 x 10 x 0.5 10 x 10 x 0.5
Surface Orientation (100) ± 1° (100) ± 1° (1012) ± 1° (100) ± 1° (100) ± 1°
Surface Finish one side polished
Junction Angle 24° ± 1°
36.8° ± 1°
24° ± 1° 24° ± 1° 24° ± 1°
36.8° ± 1°
24° ± 1°
36.8° ± 1°
Flatness l/4 l/4 l/2 l/4 l/4
Surface Roughness Ra 10Å,
Rmax 30Å
Ra 10Å,
Rmax 50Å
Ra 10Å,
Rmax 50Å
Ra 10Å,
Rmax 30Å
Ra 10Å,
Rmax 30Å
Crystal Structure cubic cubic hexagonal cubic cubic
    a
Lattice Constant (Å)   b
    c
3.905
 
 
4.213
 
 
4.758
 
12.99
5.139
 
 
3.905
 
 
Phase Transition tetragonal
< 110K
      tetragonal
< 110K
Dielectric Constant (e) 310 10 9 27 310
Coefficient of Expansion (10-6/°C) 11.1 14.2 7.5 10.3 11.1
Melting Point (°C) 2080 2800 2030 2500 2080

For other substrates and specifications please demand a quotation. The standard Nb doping amounts
of Nb:SrTiO3 are 0.05 and 0.5 wt %. Surface roughness was measured using TALYSTEP (80µm width).